Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys

Abstract The knowledge of diffusion processes in semiconducting alloys is very important both technologically and from a theoretical point of view. Here we show that, self-diffusion in Si1−x Ge x alloys as a function of temperature and Ge concentration can be described by the cBΩ thermodynamic model...

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Autores principales: Vassilis Saltas, Alexander Chroneos, Filippos Vallianatos
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/2d8f0629d5ab4bd5878c6b2c70b84a92
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