Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys

Abstract The knowledge of diffusion processes in semiconducting alloys is very important both technologically and from a theoretical point of view. Here we show that, self-diffusion in Si1−x Ge x alloys as a function of temperature and Ge concentration can be described by the cBΩ thermodynamic model...

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Autores principales:	Vassilis Saltas, Alexander Chroneos, Filippos Vallianatos
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2d8f0629d5ab4bd5878c6b2c70b84a92
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spelling	oai:doaj.org-article:2d8f0629d5ab4bd5878c6b2c70b84a922021-12-02T16:06:24ZComposition and temperature dependence of self-diffusion in Si1−x Ge x alloys10.1038/s41598-017-01301-62045-2322https://doaj.org/article/2d8f0629d5ab4bd5878c6b2c70b84a922017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01301-6https://doaj.org/toc/2045-2322Abstract The knowledge of diffusion processes in semiconducting alloys is very important both technologically and from a theoretical point of view. Here we show that, self-diffusion in Si1−x Ge x alloys as a function of temperature and Ge concentration can be described by the cBΩ thermodynamic model. This model connects the activation Gibbs free energy of point defects formation and migration with the elastic and expansion properties of the bulk material. The approach allows the systematic investigation of point defect thermodynamic parameters such as activation enthalpy, activation entropy and activation volume, based on the thermo-elastic properties (bulk modulus and its derivatives, mean atomic volume and thermal expansion coefficient) of the two end-members of the Si1−x Ge x alloy. Considerable deviations from Vegard’s law are observed, due to the diversification of the bulk properties of Si and Ge, in complete agreement with the available experimental data.Vassilis SaltasAlexander ChroneosFilippos VallianatosNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Vassilis Saltas Alexander Chroneos Filippos Vallianatos Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys
description	Abstract The knowledge of diffusion processes in semiconducting alloys is very important both technologically and from a theoretical point of view. Here we show that, self-diffusion in Si1−x Ge x alloys as a function of temperature and Ge concentration can be described by the cBΩ thermodynamic model. This model connects the activation Gibbs free energy of point defects formation and migration with the elastic and expansion properties of the bulk material. The approach allows the systematic investigation of point defect thermodynamic parameters such as activation enthalpy, activation entropy and activation volume, based on the thermo-elastic properties (bulk modulus and its derivatives, mean atomic volume and thermal expansion coefficient) of the two end-members of the Si1−x Ge x alloy. Considerable deviations from Vegard’s law are observed, due to the diversification of the bulk properties of Si and Ge, in complete agreement with the available experimental data.
format	article
author	Vassilis Saltas Alexander Chroneos Filippos Vallianatos
author_facet	Vassilis Saltas Alexander Chroneos Filippos Vallianatos
author_sort	Vassilis Saltas
title	Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys
title_short	Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys
title_full	Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys
title_fullStr	Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys
title_full_unstemmed	Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys
title_sort	composition and temperature dependence of self-diffusion in si1−x ge x alloys
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2d8f0629d5ab4bd5878c6b2c70b84a92
work_keys_str_mv	AT vassilissaltas compositionandtemperaturedependenceofselfdiffusioninsi1xgexalloys AT alexanderchroneos compositionandtemperaturedependenceofselfdiffusioninsi1xgexalloys AT filipposvallianatos compositionandtemperaturedependenceofselfdiffusioninsi1xgexalloys
_version_	1718385013347581952

Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys

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