Composition and temperature dependence of self-diffusion in Si1−x Ge x alloys
Abstract The knowledge of diffusion processes in semiconducting alloys is very important both technologically and from a theoretical point of view. Here we show that, self-diffusion in Si1−x Ge x alloys as a function of temperature and Ge concentration can be described by the cBΩ thermodynamic model...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/2d8f0629d5ab4bd5878c6b2c70b84a92 |
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