Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications

4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltag...

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Auteurs principaux: Kyuhyun Cha, Kwangsoo Kim
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
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Accès en ligne:https://doaj.org/article/3023c683c18c4929904ca737d492ffdf
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