Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications

4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltag...

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Autores principales:	Kyuhyun Cha, Kwangsoo Kim
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	4H-SiC asymmetric split gate body diode switching loss Technology T
Acceso en línea:	https://doaj.org/article/3023c683c18c4929904ca737d492ffdf
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spelling	oai:doaj.org-article:3023c683c18c4929904ca737d492ffdf2021-11-11T16:02:40ZAsymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications10.3390/en142173051996-1073https://doaj.org/article/3023c683c18c4929904ca737d492ffdf2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1073/14/21/7305https://doaj.org/toc/1996-10734H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltage. To solve this problem, in this paper, an Asymmetric 4H-SiC Split Gate MOSFET with embedded Schottky barrier diode (ASG-MOSFET) is proposed and analyzed by conducting a numerical TCAD simulation. Due to the asymmetric structure of ASG-MOSFET, it has a relatively narrow junction field-effect transistor width. Therefore, despite using the split gate structure, it effectively protects the gate oxide by dispersing the high drain voltage. The Schottky barrier diode (SBD) is also embedded next to the gate and above the Junction Field Effect transistor (JFET) region. Accordingly, since the SBD and the MOSFET share a current path, the embedded SBD does not increase in <i>R<sub>ON,SP</sub></i> of MOSFET. Therefore, ASG-MOSFET improves both static and switching characteristics at the same time. As a result, compared to the conventional 4H-SiC MOSFET with embedded SBD, Baliga′s Figure of Merit is improved by 17%, and the total energy loss is reduced by 30.5%, respectively.Kyuhyun ChaKwangsoo KimMDPI AGarticle4H-SiCasymmetricsplit gatebody diodeswitching lossTechnologyTENEnergies, Vol 14, Iss 7305, p 7305 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	4H-SiC asymmetric split gate body diode switching loss Technology T
spellingShingle	4H-SiC asymmetric split gate body diode switching loss Technology T Kyuhyun Cha Kwangsoo Kim Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
description	4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltage. To solve this problem, in this paper, an Asymmetric 4H-SiC Split Gate MOSFET with embedded Schottky barrier diode (ASG-MOSFET) is proposed and analyzed by conducting a numerical TCAD simulation. Due to the asymmetric structure of ASG-MOSFET, it has a relatively narrow junction field-effect transistor width. Therefore, despite using the split gate structure, it effectively protects the gate oxide by dispersing the high drain voltage. The Schottky barrier diode (SBD) is also embedded next to the gate and above the Junction Field Effect transistor (JFET) region. Accordingly, since the SBD and the MOSFET share a current path, the embedded SBD does not increase in <i>R<sub>ON,SP</sub></i> of MOSFET. Therefore, ASG-MOSFET improves both static and switching characteristics at the same time. As a result, compared to the conventional 4H-SiC MOSFET with embedded SBD, Baliga′s Figure of Merit is improved by 17%, and the total energy loss is reduced by 30.5%, respectively.
format	article
author	Kyuhyun Cha Kwangsoo Kim
author_facet	Kyuhyun Cha Kwangsoo Kim
author_sort	Kyuhyun Cha
title	Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
title_short	Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
title_full	Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
title_fullStr	Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
title_full_unstemmed	Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
title_sort	asymmetric split-gate 4h-sic mosfet with embedded schottky barrier diode for high-frequency applications
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/3023c683c18c4929904ca737d492ffdf
work_keys_str_mv	AT kyuhyuncha asymmetricsplitgate4hsicmosfetwithembeddedschottkybarrierdiodeforhighfrequencyapplications AT kwangsookim asymmetricsplitgate4hsicmosfetwithembeddedschottkybarrierdiodeforhighfrequencyapplications
_version_	1718432405130313728

Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications

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