Thermopower peculiarities in thin bismuth wires

The resistance and thermoelectric power of pure bismuth wires are measured in longitudinal magnetic fields up to B = 14 T at temperatures between 4.2 and 25 K. At B = 0, the 200-nm samples exhibit large values of thermopower, which are dominated by diffusion with no phonon drag being evident. Both t...

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Autores principales:	Condrea, Elena, Gilewski, Andrzej
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/31d3d3683e714eb1ae9bb9fa02169500
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spelling	oai:doaj.org-article:31d3d3683e714eb1ae9bb9fa021695002021-11-21T12:02:04ZThermopower peculiarities in thin bismuth wires2537-63651810-648Xhttps://doaj.org/article/31d3d3683e714eb1ae9bb9fa021695002011-08-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/21362https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The resistance and thermoelectric power of pure bismuth wires are measured in longitudinal magnetic fields up to B = 14 T at temperatures between 4.2 and 25 K. At B = 0, the 200-nm samples exhibit large values of thermopower, which are dominated by diffusion with no phonon drag being evident. Both the magnetoresistance and magnetothermopower show well-pronounced features generated by the diffuse surface scattering of hole carriers. In particular, the magnetothermopower offers the possibility of identifying the characteristic magnetic field, where the diameter of the hole Larmor orbit equals the wire diameter as an extremum. The contribution of holes to the charge transport in pure Bi nanowires is more significant than generally thought. The results highlight the important role played by domination of hole carriers in the conductibility of Bi wires at low temperatures.Condrea, ElenaGilewski, AndrzejD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 3-4, Pp 300-309 (2011)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Condrea, Elena Gilewski, Andrzej Thermopower peculiarities in thin bismuth wires
description	The resistance and thermoelectric power of pure bismuth wires are measured in longitudinal magnetic fields up to B = 14 T at temperatures between 4.2 and 25 K. At B = 0, the 200-nm samples exhibit large values of thermopower, which are dominated by diffusion with no phonon drag being evident. Both the magnetoresistance and magnetothermopower show well-pronounced features generated by the diffuse surface scattering of hole carriers. In particular, the magnetothermopower offers the possibility of identifying the characteristic magnetic field, where the diameter of the hole Larmor orbit equals the wire diameter as an extremum. The contribution of holes to the charge transport in pure Bi nanowires is more significant than generally thought. The results highlight the important role played by domination of hole carriers in the conductibility of Bi wires at low temperatures.
format	article
author	Condrea, Elena Gilewski, Andrzej
author_facet	Condrea, Elena Gilewski, Andrzej
author_sort	Condrea, Elena
title	Thermopower peculiarities in thin bismuth wires
title_short	Thermopower peculiarities in thin bismuth wires
title_full	Thermopower peculiarities in thin bismuth wires
title_fullStr	Thermopower peculiarities in thin bismuth wires
title_full_unstemmed	Thermopower peculiarities in thin bismuth wires
title_sort	thermopower peculiarities in thin bismuth wires
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2011
url	https://doaj.org/article/31d3d3683e714eb1ae9bb9fa02169500
work_keys_str_mv	AT condreaelena thermopowerpeculiaritiesinthinbismuthwires AT gilewskiandrzej thermopowerpeculiaritiesinthinbismuthwires
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Thermopower peculiarities in thin bismuth wires

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