Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device

Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device

For the first time, this research addresses the notable layout proximity effects induced by stress memorization technique in planer high-k/Metal gate NMOS device systematically, including width effect, different shallow trench spacing effect, and length of diffusion effect. Based on the oxygen diffu...

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Autores principales: Ying-Fei Wang, Qing-Chun Zhang, Ping Li, Xiao-Jing Su, Li-Song Dong, Rui Chen, Li-Bin Zhang, Tian-Yang Gai, Ya-Juan Su, Ya-Yi Wei, Tian Chun Ye
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
Materias:
Layout proximity effects
high-k HfO₂
stress memorization technique
Al diffusion
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/3269a09e61a045ebb74841b3612bc1ff
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https://doaj.org/article/3269a09e61a045ebb74841b3612bc1ff

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