Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device
For the first time, this research addresses the notable layout proximity effects induced by stress memorization technique in planer high-k/Metal gate NMOS device systematically, including width effect, different shallow trench spacing effect, and length of diffusion effect. Based on the oxygen diffu...
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| Autores principales: | , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/3269a09e61a045ebb74841b3612bc1ff |
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