Low-threshold optically pumped lasing in highly strained germanium nanowires
Integrating group IV lasing devices into technologically relevant CMOS architectures has proven challenging. Here, the authors demonstrate low-threshold lasing, which is important for potential electronic and photonic circuits, using strained germanium nanowires as the gain material.
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2017
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/3274bb5645db4b688313cec84d8d2c58 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|