Low-threshold optically pumped lasing in highly strained germanium nanowires

Integrating group IV lasing devices into technologically relevant CMOS architectures has proven challenging. Here, the authors demonstrate low-threshold lasing, which is important for potential electronic and photonic circuits, using strained germanium nanowires as the gain material.

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Autores principales:	Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme, Shashank Gupta, Krishna Saraswat, Kwang Hong Lee, Yeji Kim, Dabin Min, Yongduck Jung, Haodong Qiu, Hong Wang, Eugene A. Fitzgerald, Chuan Seng Tan, Donguk Nam
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/3274bb5645db4b688313cec84d8d2c58
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spelling	oai:doaj.org-article:3274bb5645db4b688313cec84d8d2c582021-12-02T17:06:09ZLow-threshold optically pumped lasing in highly strained germanium nanowires10.1038/s41467-017-02026-w2041-1723https://doaj.org/article/3274bb5645db4b688313cec84d8d2c582017-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-02026-whttps://doaj.org/toc/2041-1723Integrating group IV lasing devices into technologically relevant CMOS architectures has proven challenging. Here, the authors demonstrate low-threshold lasing, which is important for potential electronic and photonic circuits, using strained germanium nanowires as the gain material.Shuyu BaoDaeik KimChibuzo OnwukaemeShashank GuptaKrishna SaraswatKwang Hong LeeYeji KimDabin MinYongduck JungHaodong QiuHong WangEugene A. FitzgeraldChuan Seng TanDonguk NamNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Shuyu Bao Daeik Kim Chibuzo Onwukaeme Shashank Gupta Krishna Saraswat Kwang Hong Lee Yeji Kim Dabin Min Yongduck Jung Haodong Qiu Hong Wang Eugene A. Fitzgerald Chuan Seng Tan Donguk Nam Low-threshold optically pumped lasing in highly strained germanium nanowires
description	Integrating group IV lasing devices into technologically relevant CMOS architectures has proven challenging. Here, the authors demonstrate low-threshold lasing, which is important for potential electronic and photonic circuits, using strained germanium nanowires as the gain material.
format	article
author	Shuyu Bao Daeik Kim Chibuzo Onwukaeme Shashank Gupta Krishna Saraswat Kwang Hong Lee Yeji Kim Dabin Min Yongduck Jung Haodong Qiu Hong Wang Eugene A. Fitzgerald Chuan Seng Tan Donguk Nam
author_facet	Shuyu Bao Daeik Kim Chibuzo Onwukaeme Shashank Gupta Krishna Saraswat Kwang Hong Lee Yeji Kim Dabin Min Yongduck Jung Haodong Qiu Hong Wang Eugene A. Fitzgerald Chuan Seng Tan Donguk Nam
author_sort	Shuyu Bao
title	Low-threshold optically pumped lasing in highly strained germanium nanowires
title_short	Low-threshold optically pumped lasing in highly strained germanium nanowires
title_full	Low-threshold optically pumped lasing in highly strained germanium nanowires
title_fullStr	Low-threshold optically pumped lasing in highly strained germanium nanowires
title_full_unstemmed	Low-threshold optically pumped lasing in highly strained germanium nanowires
title_sort	low-threshold optically pumped lasing in highly strained germanium nanowires
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/3274bb5645db4b688313cec84d8d2c58
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Low-threshold optically pumped lasing in highly strained germanium nanowires

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