A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation
Abstract Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved. This paper proposes a novel hybrid termination structure for ve...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Wiley
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/32d8f67dc1ce439988b3912291ef2c80 |
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