Quantum tunneling in magnetic tunneling junctions

This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth...

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Auteurs principaux: Evgeni Cruz de Gracia, Lucio Strazzabosco Dorneles, Luiz Fernando Schelp, Sérgio Ribeiro Teixiera, Mario Norberto Baibich
Format: article
Langue:ES
Publié: Editorial Universitaria 2012
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Accès en ligne:https://doaj.org/article/345bf1ff742c4c10b3aad231832376c1
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