Quantum tunneling in magnetic tunneling junctions

This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth...

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Autores principales:	Evgeni Cruz de Gracia, Lucio Strazzabosco Dorneles, Luiz Fernando Schelp, Sérgio Ribeiro Teixiera, Mario Norberto Baibich
Formato:	article
Lenguaje:	ES
Publicado:	Editorial Universitaria 2012
Materias:	electronic transport junction magnetization tunneling Biotechnology TP248.13-248.65
Acceso en línea:	https://doaj.org/article/345bf1ff742c4c10b3aad231832376c1
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id	oai:doaj.org-article:345bf1ff742c4c10b3aad231832376c1
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spelling	oai:doaj.org-article:345bf1ff742c4c10b3aad231832376c12021-11-16T20:02:31ZQuantum tunneling in magnetic tunneling junctions1680-88942219-6714https://doaj.org/article/345bf1ff742c4c10b3aad231832376c12012-06-01T00:00:00Zhttps://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96https://doaj.org/toc/1680-8894https://doaj.org/toc/2219-6714This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves.Evgeni Cruz de GraciaLucio Strazzabosco DornelesLuiz Fernando SchelpSérgio Ribeiro TeixieraMario Norberto BaibichEditorial Universitariaarticleelectronic transportjunctionmagnetizationtunnelingBiotechnologyTP248.13-248.65ESRevista de I + D Tecnológico, Vol 8, Iss 1, Pp 26-32 (2012)
institution	DOAJ
collection	DOAJ
language	ES
topic	electronic transport junction magnetization tunneling Biotechnology TP248.13-248.65
spellingShingle	electronic transport junction magnetization tunneling Biotechnology TP248.13-248.65 Evgeni Cruz de Gracia Lucio Strazzabosco Dorneles Luiz Fernando Schelp Sérgio Ribeiro Teixiera Mario Norberto Baibich Quantum tunneling in magnetic tunneling junctions
description	This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves.
format	article
author	Evgeni Cruz de Gracia Lucio Strazzabosco Dorneles Luiz Fernando Schelp Sérgio Ribeiro Teixiera Mario Norberto Baibich
author_facet	Evgeni Cruz de Gracia Lucio Strazzabosco Dorneles Luiz Fernando Schelp Sérgio Ribeiro Teixiera Mario Norberto Baibich
author_sort	Evgeni Cruz de Gracia
title	Quantum tunneling in magnetic tunneling junctions
title_short	Quantum tunneling in magnetic tunneling junctions
title_full	Quantum tunneling in magnetic tunneling junctions
title_fullStr	Quantum tunneling in magnetic tunneling junctions
title_full_unstemmed	Quantum tunneling in magnetic tunneling junctions
title_sort	quantum tunneling in magnetic tunneling junctions
publisher	Editorial Universitaria
publishDate	2012
url	https://doaj.org/article/345bf1ff742c4c10b3aad231832376c1
work_keys_str_mv	AT evgenicruzdegracia quantumtunnelinginmagnetictunnelingjunctions AT luciostrazzaboscodorneles quantumtunnelinginmagnetictunnelingjunctions AT luizfernandoschelp quantumtunnelinginmagnetictunnelingjunctions AT sergioribeiroteixiera quantumtunnelinginmagnetictunnelingjunctions AT marionorbertobaibich quantumtunnelinginmagnetictunnelingjunctions
_version_	1718426040146067456

Quantum tunneling in magnetic tunneling junctions

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