Optimizing VO2 film properties for use in SAW devices
The aim of this study is to optimize the conditions for producing thin VO2 films for their use in SAW devices. We used the pulsed laser deposition (PLD) method to produce VO2 films. We used a metallic vanadium target. The dependence of the oxygen pressure during PLD on the resistive metal–insulator...
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2021
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oai:doaj.org-article:35a03d06a17144949aa1fe752a05e91a2021-11-11T04:02:22ZOptimizing VO2 film properties for use in SAW devices2010-135X2010-136810.1142/S2010135X21600122https://doaj.org/article/35a03d06a17144949aa1fe752a05e91a2021-10-01T00:00:00Zhttp://www.worldscientific.com/doi/epdf/10.1142/S2010135X21600122https://doaj.org/toc/2010-135Xhttps://doaj.org/toc/2010-1368The aim of this study is to optimize the conditions for producing thin VO2 films for their use in SAW devices. We used the pulsed laser deposition (PLD) method to produce VO2 films. We used a metallic vanadium target. The dependence of the oxygen pressure during PLD on the resistive metal–insulator transition (MIT) on substrates of c-sapphire and LiNbO3 YX/128∘ was studied. The resulting films had sharp metal–insulator temperature transitions on c-Al2O3. The most high-quality films showed resistance change by four orders of magnitude. At the lower point of the hysteresis, the resistance of these samples was in the range of 50–100 Ω. The synthesized VO2 films had a sharp temperature transition and a relatively small width of thermal hysteresis. The SAW damping during its passage through a VO2/ZnO/LiNbO3 YX/128∘ film at the metal–insulator phase transition temperature was studied. Attenuation SAW decreases with increasing temperature from 52 dB/cm to 0 dB/cm.M. E. KutepovG. Ya. KarapetyanI. V. LisnevskayaK. G. AbdulvakhidovA. A. KozminE. M. KaidashevWorld Scientific Publishingarticlesurface acoustic wavevo2 filmlaser pulsed depositionparameter s21metal–insulator transitionElectricityQC501-721ENJournal of Advanced Dielectrics, Vol 11, Iss 5, Pp 2160012-1-2160012-4 (2021) |
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surface acoustic wave vo2 film laser pulsed deposition parameter s21 metal–insulator transition Electricity QC501-721 |
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surface acoustic wave vo2 film laser pulsed deposition parameter s21 metal–insulator transition Electricity QC501-721 M. E. Kutepov G. Ya. Karapetyan I. V. Lisnevskaya K. G. Abdulvakhidov A. A. Kozmin E. M. Kaidashev Optimizing VO2 film properties for use in SAW devices |
description |
The aim of this study is to optimize the conditions for producing thin VO2 films for their use in SAW devices. We used the pulsed laser deposition (PLD) method to produce VO2 films. We used a metallic vanadium target. The dependence of the oxygen pressure during PLD on the resistive metal–insulator transition (MIT) on substrates of c-sapphire and LiNbO3 YX/128∘ was studied. The resulting films had sharp metal–insulator temperature transitions on c-Al2O3. The most high-quality films showed resistance change by four orders of magnitude. At the lower point of the hysteresis, the resistance of these samples was in the range of 50–100 Ω. The synthesized VO2 films had a sharp temperature transition and a relatively small width of thermal hysteresis. The SAW damping during its passage through a VO2/ZnO/LiNbO3 YX/128∘ film at the metal–insulator phase transition temperature was studied. Attenuation SAW decreases with increasing temperature from 52 dB/cm to 0 dB/cm. |
format |
article |
author |
M. E. Kutepov G. Ya. Karapetyan I. V. Lisnevskaya K. G. Abdulvakhidov A. A. Kozmin E. M. Kaidashev |
author_facet |
M. E. Kutepov G. Ya. Karapetyan I. V. Lisnevskaya K. G. Abdulvakhidov A. A. Kozmin E. M. Kaidashev |
author_sort |
M. E. Kutepov |
title |
Optimizing VO2 film properties for use in SAW devices |
title_short |
Optimizing VO2 film properties for use in SAW devices |
title_full |
Optimizing VO2 film properties for use in SAW devices |
title_fullStr |
Optimizing VO2 film properties for use in SAW devices |
title_full_unstemmed |
Optimizing VO2 film properties for use in SAW devices |
title_sort |
optimizing vo2 film properties for use in saw devices |
publisher |
World Scientific Publishing |
publishDate |
2021 |
url |
https://doaj.org/article/35a03d06a17144949aa1fe752a05e91a |
work_keys_str_mv |
AT mekutepov optimizingvo2filmpropertiesforuseinsawdevices AT gyakarapetyan optimizingvo2filmpropertiesforuseinsawdevices AT ivlisnevskaya optimizingvo2filmpropertiesforuseinsawdevices AT kgabdulvakhidov optimizingvo2filmpropertiesforuseinsawdevices AT aakozmin optimizingvo2filmpropertiesforuseinsawdevices AT emkaidashev optimizingvo2filmpropertiesforuseinsawdevices |
_version_ |
1718439574658613248 |