Laser ablation of silicon with THz bursts of femtosecond pulses

Abstract In this work, we performed an experimental investigation supported by a theoretical analysis, to improve knowledge on the laser ablation of silicon with THz bursts of femtosecond laser pulses. Laser ablated craters have been created using 200 fs pulses at a wavelength of 1030 nm on silicon...

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Autores principales:	Caterina Gaudiuso, Pavel N. Terekhin, Annalisa Volpe, Stefan Nolte, Bärbel Rethfeld, Antonio Ancona
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/36584e59f43648beb64ac84bdd124185
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spelling	oai:doaj.org-article:36584e59f43648beb64ac84bdd1241852021-12-02T17:14:24ZLaser ablation of silicon with THz bursts of femtosecond pulses10.1038/s41598-021-92645-72045-2322https://doaj.org/article/36584e59f43648beb64ac84bdd1241852021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-92645-7https://doaj.org/toc/2045-2322Abstract In this work, we performed an experimental investigation supported by a theoretical analysis, to improve knowledge on the laser ablation of silicon with THz bursts of femtosecond laser pulses. Laser ablated craters have been created using 200 fs pulses at a wavelength of 1030 nm on silicon samples systematically varying the burst features and comparing to the normal pulse mode (NPM). Using bursts in general allowed reducing the thermal load to the material, however, at the expense of the ablation rate. The higher the number of pulses in the bursts and the lower the intra-burst frequency, the lower is the specific ablation rate. However, bursts at 2 THz led to a higher specific ablation rate compared to NPM, in a narrow window of parameters. Theoretical investigations based on the numerical solution of the density-dependent two temperature model revealed that lower lattice temperatures are reached with more pulses and lower intra-burst frequencies, thus supporting the experimental evidence of the lower thermal load in burst mode (BM). This is ascribed to the weaker transient drop of reflectivity, which suggests that with bursts less energy is transferred from the laser to the material. This also explains the trends of the specific ablation rates. Moreover, we found that two-photon absorption plays a fundamental role during BM processing in the THz frequency range.Caterina GaudiusoPavel N. TerekhinAnnalisa VolpeStefan NolteBärbel RethfeldAntonio AnconaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Caterina Gaudiuso Pavel N. Terekhin Annalisa Volpe Stefan Nolte Bärbel Rethfeld Antonio Ancona Laser ablation of silicon with THz bursts of femtosecond pulses
description	Abstract In this work, we performed an experimental investigation supported by a theoretical analysis, to improve knowledge on the laser ablation of silicon with THz bursts of femtosecond laser pulses. Laser ablated craters have been created using 200 fs pulses at a wavelength of 1030 nm on silicon samples systematically varying the burst features and comparing to the normal pulse mode (NPM). Using bursts in general allowed reducing the thermal load to the material, however, at the expense of the ablation rate. The higher the number of pulses in the bursts and the lower the intra-burst frequency, the lower is the specific ablation rate. However, bursts at 2 THz led to a higher specific ablation rate compared to NPM, in a narrow window of parameters. Theoretical investigations based on the numerical solution of the density-dependent two temperature model revealed that lower lattice temperatures are reached with more pulses and lower intra-burst frequencies, thus supporting the experimental evidence of the lower thermal load in burst mode (BM). This is ascribed to the weaker transient drop of reflectivity, which suggests that with bursts less energy is transferred from the laser to the material. This also explains the trends of the specific ablation rates. Moreover, we found that two-photon absorption plays a fundamental role during BM processing in the THz frequency range.
format	article
author	Caterina Gaudiuso Pavel N. Terekhin Annalisa Volpe Stefan Nolte Bärbel Rethfeld Antonio Ancona
author_facet	Caterina Gaudiuso Pavel N. Terekhin Annalisa Volpe Stefan Nolte Bärbel Rethfeld Antonio Ancona
author_sort	Caterina Gaudiuso
title	Laser ablation of silicon with THz bursts of femtosecond pulses
title_short	Laser ablation of silicon with THz bursts of femtosecond pulses
title_full	Laser ablation of silicon with THz bursts of femtosecond pulses
title_fullStr	Laser ablation of silicon with THz bursts of femtosecond pulses
title_full_unstemmed	Laser ablation of silicon with THz bursts of femtosecond pulses
title_sort	laser ablation of silicon with thz bursts of femtosecond pulses
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/36584e59f43648beb64ac84bdd124185
work_keys_str_mv	AT caterinagaudiuso laserablationofsiliconwiththzburstsoffemtosecondpulses AT pavelnterekhin laserablationofsiliconwiththzburstsoffemtosecondpulses AT annalisavolpe laserablationofsiliconwiththzburstsoffemtosecondpulses AT stefannolte laserablationofsiliconwiththzburstsoffemtosecondpulses AT barbelrethfeld laserablationofsiliconwiththzburstsoffemtosecondpulses AT antonioancona laserablationofsiliconwiththzburstsoffemtosecondpulses
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Laser ablation of silicon with THz bursts of femtosecond pulses

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