Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
Abstract Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corr...
Enregistré dans:
| Auteurs principaux: | , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/3832f137e2ee473bb11421d079f24e12 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|