Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

Abstract Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corr...

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Autores principales:	Kyunghwan Min, Dongmyung Jung, Yongwoo Kwon
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/3832f137e2ee473bb11421d079f24e12
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spelling	oai:doaj.org-article:3832f137e2ee473bb11421d079f24e122021-12-02T10:48:31ZInvestigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation10.1038/s41598-021-81896-z2045-2322https://doaj.org/article/3832f137e2ee473bb11421d079f24e122021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-81896-zhttps://doaj.org/toc/2045-2322Abstract Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corresponds to a defective and conducting region with a high anion vacancy concentration, whereas the high-resistance phase corresponds to a non-defective and insulating region with a low anion-vacancy concentration. We adopt a phase variable corresponding to 0 and 1 in the insulating and conducting phases, respectively, and we change the phase variable suitably when new defects are introduced during voltage ramp-up for forming. Initially, some defects are embedded in the switching material. When the applied voltage is ramped up, the phase variable changes from 0 to 1 at locations wherein the electric field exceeds a critical value, which corresponds to the introduction of new defects via vacancy generation. The applied voltage at which the defects percolate to form a filament is considered as the forming voltage. Here, we study the forming-voltage uniformity using simulations, and we find that for typical planar-electrode devices, the forming voltage varies significantly owing to the stochastic location of the initial defects at which the electric field is “crowded.” On the other hand, a protruding electrode can improve the switching uniformity drastically via facilitating the deterministic location of electric-field crowding, which also supported by the reported experimental results.Kyunghwan MinDongmyung JungYongwoo KwonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Kyunghwan Min Dongmyung Jung Yongwoo Kwon Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
description	Abstract Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corresponds to a defective and conducting region with a high anion vacancy concentration, whereas the high-resistance phase corresponds to a non-defective and insulating region with a low anion-vacancy concentration. We adopt a phase variable corresponding to 0 and 1 in the insulating and conducting phases, respectively, and we change the phase variable suitably when new defects are introduced during voltage ramp-up for forming. Initially, some defects are embedded in the switching material. When the applied voltage is ramped up, the phase variable changes from 0 to 1 at locations wherein the electric field exceeds a critical value, which corresponds to the introduction of new defects via vacancy generation. The applied voltage at which the defects percolate to form a filament is considered as the forming voltage. Here, we study the forming-voltage uniformity using simulations, and we find that for typical planar-electrode devices, the forming voltage varies significantly owing to the stochastic location of the initial defects at which the electric field is “crowded.” On the other hand, a protruding electrode can improve the switching uniformity drastically via facilitating the deterministic location of electric-field crowding, which also supported by the reported experimental results.
format	article
author	Kyunghwan Min Dongmyung Jung Yongwoo Kwon
author_facet	Kyunghwan Min Dongmyung Jung Yongwoo Kwon
author_sort	Kyunghwan Min
title	Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
title_short	Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
title_full	Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
title_fullStr	Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
title_full_unstemmed	Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
title_sort	investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/3832f137e2ee473bb11421d079f24e12
work_keys_str_mv	AT kyunghwanmin investigationofswitchinguniformityinresistivememoryviafiniteelementsimulationofconductivefilamentformation AT dongmyungjung investigationofswitchinguniformityinresistivememoryviafiniteelementsimulationofconductivefilamentformation AT yongwookwon investigationofswitchinguniformityinresistivememoryviafiniteelementsimulationofconductivefilamentformation
_version_	1718396640010698752

Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

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