Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

Abstract Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corr...

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Autores principales: Kyunghwan Min, Dongmyung Jung, Yongwoo Kwon
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/3832f137e2ee473bb11421d079f24e12
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