Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
Abstract Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corr...
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Autores principales: | Kyunghwan Min, Dongmyung Jung, Yongwoo Kwon |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/3832f137e2ee473bb11421d079f24e12 |
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