Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
Abstract Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corr...
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| Main Authors: | , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/3832f137e2ee473bb11421d079f24e12 |
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