Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties

Abstract In this work we report a facile route to grow large area, uniform, continuous and few-layer α-In2Te3 film via chemical vapor deposition (CVD) methods. The characterizations show the large area of CVD-grown few-layer α-In2Te3. This method guarantees the precise control of thickness down to f...

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Autores principales: Shaohui Zhang, Jingyang Zhang, Baosheng Liu, Xiaobo Jia, Guofu Wang, Haixin Chang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/39a6b410efc543d09f8a027e80bfc778
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