Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties

Abstract In this work we report a facile route to grow large area, uniform, continuous and few-layer α-In2Te3 film via chemical vapor deposition (CVD) methods. The characterizations show the large area of CVD-grown few-layer α-In2Te3. This method guarantees the precise control of thickness down to f...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Shaohui Zhang, Jingyang Zhang, Baosheng Liu, Xiaobo Jia, Guofu Wang, Haixin Chang
Format: article
Langue:EN
Publié: Nature Portfolio 2019
Sujets:
R
Q
Accès en ligne:https://doaj.org/article/39a6b410efc543d09f8a027e80bfc778
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!