Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties

Abstract In this work we report a facile route to grow large area, uniform, continuous and few-layer α-In2Te3 film via chemical vapor deposition (CVD) methods. The characterizations show the large area of CVD-grown few-layer α-In2Te3. This method guarantees the precise control of thickness down to f...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Shaohui Zhang, Jingyang Zhang, Baosheng Liu, Xiaobo Jia, Guofu Wang, Haixin Chang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/39a6b410efc543d09f8a027e80bfc778
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:39a6b410efc543d09f8a027e80bfc778
record_format	dspace
spelling	oai:doaj.org-article:39a6b410efc543d09f8a027e80bfc7782021-12-02T15:09:53ZLarge area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties10.1038/s41598-019-47520-x2045-2322https://doaj.org/article/39a6b410efc543d09f8a027e80bfc7782019-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-47520-xhttps://doaj.org/toc/2045-2322Abstract In this work we report a facile route to grow large area, uniform, continuous and few-layer α-In2Te3 film via chemical vapor deposition (CVD) methods. The characterizations show the large area of CVD-grown few-layer α-In2Te3. This method guarantees the precise control of thickness down to few layers and large area preparation. The magnetoresistance (MR) properties of few-layer In2Te3 was investigated from 2 to 300 K and its MR stability under long exposure to ambient air was studied for the first time. Few-layer of α-In2Te3 shows a positive MR and the largest transverse MR was observed to about 11% at 2 K and a high stability of MR to long time exposure in air up to 21 weeks.Shaohui ZhangJingyang ZhangBaosheng LiuXiaobo JiaGuofu WangHaixin ChangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shaohui Zhang Jingyang Zhang Baosheng Liu Xiaobo Jia Guofu Wang Haixin Chang Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties
description	Abstract In this work we report a facile route to grow large area, uniform, continuous and few-layer α-In2Te3 film via chemical vapor deposition (CVD) methods. The characterizations show the large area of CVD-grown few-layer α-In2Te3. This method guarantees the precise control of thickness down to few layers and large area preparation. The magnetoresistance (MR) properties of few-layer In2Te3 was investigated from 2 to 300 K and its MR stability under long exposure to ambient air was studied for the first time. Few-layer of α-In2Te3 shows a positive MR and the largest transverse MR was observed to about 11% at 2 K and a high stability of MR to long time exposure in air up to 21 weeks.
format	article
author	Shaohui Zhang Jingyang Zhang Baosheng Liu Xiaobo Jia Guofu Wang Haixin Chang
author_facet	Shaohui Zhang Jingyang Zhang Baosheng Liu Xiaobo Jia Guofu Wang Haixin Chang
author_sort	Shaohui Zhang
title	Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties
title_short	Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties
title_full	Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties
title_fullStr	Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties
title_full_unstemmed	Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties
title_sort	large area growth of few-layer in2te3 films by chemical vapor deposition and its magnetoresistance properties
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/39a6b410efc543d09f8a027e80bfc778
work_keys_str_mv	AT shaohuizhang largeareagrowthoffewlayerin2te3filmsbychemicalvapordepositionanditsmagnetoresistanceproperties AT jingyangzhang largeareagrowthoffewlayerin2te3filmsbychemicalvapordepositionanditsmagnetoresistanceproperties AT baoshengliu largeareagrowthoffewlayerin2te3filmsbychemicalvapordepositionanditsmagnetoresistanceproperties AT xiaobojia largeareagrowthoffewlayerin2te3filmsbychemicalvapordepositionanditsmagnetoresistanceproperties AT guofuwang largeareagrowthoffewlayerin2te3filmsbychemicalvapordepositionanditsmagnetoresistanceproperties AT haixinchang largeareagrowthoffewlayerin2te3filmsbychemicalvapordepositionanditsmagnetoresistanceproperties
_version_	1718387745556004864

Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties

Ejemplares similares