Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet...
Enregistré dans:
| Auteurs principaux: | , , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2019
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/3a16f88ca06c45609218901b2951549b |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|