Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet...

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Autores principales:	Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, Mu-Shih Yeh, Yu-Ru Lin, Yung-Chun Wu
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Band-to-band tunneling induced hot electron (BBHE) gate-all-around (GAA) nanosheet thin-film transistor (TFT) nonvolatile memory (NVM) Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/3a16f88ca06c45609218901b2951549b
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spelling	oai:doaj.org-article:3a16f88ca06c45609218901b2951549b2021-11-19T00:00:54ZLow-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method2168-673410.1109/JEDS.2018.2886446https://doaj.org/article/3a16f88ca06c45609218901b2951549b2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8575137/https://doaj.org/toc/2168-6734A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retentionLun-Chun ChenHung-Bin ChenYu-Shuo ChangShih-Han LinMing-Hung HanJia-Jiun WuMu-Shih YehYu-Ru LinYung-Chun WuIEEEarticleBand-to-band tunneling induced hot electron (BBHE)gate-all-around (GAA)nanosheetthin-film transistor (TFT)nonvolatile memory (NVM)Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 168-173 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Band-to-band tunneling induced hot electron (BBHE) gate-all-around (GAA) nanosheet thin-film transistor (TFT) nonvolatile memory (NVM) Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Band-to-band tunneling induced hot electron (BBHE) gate-all-around (GAA) nanosheet thin-film transistor (TFT) nonvolatile memory (NVM) Electrical engineering. Electronics. Nuclear engineering TK1-9971 Lun-Chun Chen Hung-Bin Chen Yu-Shuo Chang Shih-Han Lin Ming-Hung Han Jia-Jiun Wu Mu-Shih Yeh Yu-Ru Lin Yung-Chun Wu Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
description	A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retention
format	article
author	Lun-Chun Chen Hung-Bin Chen Yu-Shuo Chang Shih-Han Lin Ming-Hung Han Jia-Jiun Wu Mu-Shih Yeh Yu-Ru Lin Yung-Chun Wu
author_facet	Lun-Chun Chen Hung-Bin Chen Yu-Shuo Chang Shih-Han Lin Ming-Hung Han Jia-Jiun Wu Mu-Shih Yeh Yu-Ru Lin Yung-Chun Wu
author_sort	Lun-Chun Chen
title	Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_short	Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_full	Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_fullStr	Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_full_unstemmed	Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_sort	low-voltage programmable gate-all-around (gaa) nanosheet tft nonvolatile memory using band-to-band tunneling induced hot electron (bbhe) method
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/3a16f88ca06c45609218901b2951549b
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Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

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