Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet...

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Bibliographic Details
Main Authors: Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, Mu-Shih Yeh, Yu-Ru Lin, Yung-Chun Wu
Format: article
Language:EN
Published: IEEE 2019
Subjects:
Band-to-band tunneling induced hot electron (BBHE)
gate-all-around (GAA)
nanosheet
thin-film transistor (TFT)
nonvolatile memory (NVM)
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Online Access:https://doaj.org/article/3a16f88ca06c45609218901b2951549b
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https://doaj.org/article/3a16f88ca06c45609218901b2951549b

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