Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
We have demonstrated the role of thermal annealing treatment after InGaN quantum well layer growth to improve the interface morphology and luminescence properties of InGaN/GaN multiple quantum wells (MQWs). X-ray diffraction and transmission electron microscope analyses reveal that better structural...
Enregistré dans:
| Auteurs principaux: | , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Elsevier
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/3a4b33131b054ff98088c2472ca4152d |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|