Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

We have demonstrated the role of thermal annealing treatment after InGaN quantum well layer growth to improve the interface morphology and luminescence properties of InGaN/GaN multiple quantum wells (MQWs). X-ray diffraction and transmission electron microscope analyses reveal that better structural...

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Autores principales:	Yufei Hou, Feng Liang, Degang Zhao, Zongshun Liu, Ping Chen, Jing Yang
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	InGaN/GaN multiple quantum wells Luminescence properties Thermal annealing Interface quality Physics QC1-999
Acceso en línea:	https://doaj.org/article/3a4b33131b054ff98088c2472ca4152d
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spelling	oai:doaj.org-article:3a4b33131b054ff98088c2472ca4152d2021-11-26T04:28:25ZImprovement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment2211-379710.1016/j.rinp.2021.105057https://doaj.org/article/3a4b33131b054ff98088c2472ca4152d2021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2211379721010457https://doaj.org/toc/2211-3797We have demonstrated the role of thermal annealing treatment after InGaN quantum well layer growth to improve the interface morphology and luminescence properties of InGaN/GaN multiple quantum wells (MQWs). X-ray diffraction and transmission electron microscope analyses reveal that better structural properties are achieved by appropriately increasing the ramp-up time as well as relatively decreasing the annealing temperature as the interface quality of MQWs is improved. Moreover, the photoluminescence (PL) and electroluminescence (EL) measurements confirm the higher crystal quality and optical properties of InGaN/GaN MQWs. The reason may be the redistribution of indium atoms improves the homogeneity of localized states in MQWs, and the In-rich clustering behavior is obviously alleviated. This annealing method is feasible and can lead to obtaining high-performance semiconductor optoelectronic devices.Yufei HouFeng LiangDegang ZhaoZongshun LiuPing ChenJing YangElsevierarticleInGaN/GaN multiple quantum wellsLuminescence propertiesThermal annealingInterface qualityPhysicsQC1-999ENResults in Physics, Vol 31, Iss , Pp 105057- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	InGaN/GaN multiple quantum wells Luminescence properties Thermal annealing Interface quality Physics QC1-999
spellingShingle	InGaN/GaN multiple quantum wells Luminescence properties Thermal annealing Interface quality Physics QC1-999 Yufei Hou Feng Liang Degang Zhao Zongshun Liu Ping Chen Jing Yang Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
description	We have demonstrated the role of thermal annealing treatment after InGaN quantum well layer growth to improve the interface morphology and luminescence properties of InGaN/GaN multiple quantum wells (MQWs). X-ray diffraction and transmission electron microscope analyses reveal that better structural properties are achieved by appropriately increasing the ramp-up time as well as relatively decreasing the annealing temperature as the interface quality of MQWs is improved. Moreover, the photoluminescence (PL) and electroluminescence (EL) measurements confirm the higher crystal quality and optical properties of InGaN/GaN MQWs. The reason may be the redistribution of indium atoms improves the homogeneity of localized states in MQWs, and the In-rich clustering behavior is obviously alleviated. This annealing method is feasible and can lead to obtaining high-performance semiconductor optoelectronic devices.
format	article
author	Yufei Hou Feng Liang Degang Zhao Zongshun Liu Ping Chen Jing Yang
author_facet	Yufei Hou Feng Liang Degang Zhao Zongshun Liu Ping Chen Jing Yang
author_sort	Yufei Hou
title	Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
title_short	Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
title_full	Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
title_fullStr	Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
title_full_unstemmed	Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
title_sort	improvement of interface morphology and luminescence properties of ingan/gan multiple quantum wells by thermal annealing treatment
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/3a4b33131b054ff98088c2472ca4152d
work_keys_str_mv	AT yufeihou improvementofinterfacemorphologyandluminescencepropertiesofinganganmultiplequantumwellsbythermalannealingtreatment AT fengliang improvementofinterfacemorphologyandluminescencepropertiesofinganganmultiplequantumwellsbythermalannealingtreatment AT degangzhao improvementofinterfacemorphologyandluminescencepropertiesofinganganmultiplequantumwellsbythermalannealingtreatment AT zongshunliu improvementofinterfacemorphologyandluminescencepropertiesofinganganmultiplequantumwellsbythermalannealingtreatment AT pingchen improvementofinterfacemorphologyandluminescencepropertiesofinganganmultiplequantumwellsbythermalannealingtreatment AT jingyang improvementofinterfacemorphologyandluminescencepropertiesofinganganmultiplequantumwellsbythermalannealingtreatment
_version_	1718409894232588288

Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

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