Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

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Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

We have demonstrated the role of thermal annealing treatment after InGaN quantum well layer growth to improve the interface morphology and luminescence properties of InGaN/GaN multiple quantum wells (MQWs). X-ray diffraction and transmission electron microscope analyses reveal that better structural...

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Detalles Bibliográficos
Autores principales:	Yufei Hou, Feng Liang, Degang Zhao, Zongshun Liu, Ping Chen, Jing Yang
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	InGaN/GaN multiple quantum wells Luminescence properties Thermal annealing Interface quality Physics QC1-999
Acceso en línea:	https://doaj.org/article/3a4b33131b054ff98088c2472ca4152d
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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