Humidity sensor based on Gallium Nitride for real time monitoring applications

Abstract Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to anions, making it usable as humidity sensor due to w...

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Auteurs principaux: Chaudhry Muhammad Furqan, Muhammad Umair Khan, Muhammad Awais, Fulong Jiang, Jinho Bae, Arshad Hassan, Hoi-Sing Kwok
Format: article
Langue:EN
Publié: Nature Portfolio 2021
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Accès en ligne:https://doaj.org/article/3a822eb974634b5f871de4a7c3039c32
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