Humidity sensor based on Gallium Nitride for real time monitoring applications

Abstract Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to anions, making it usable as humidity sensor due to w...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Chaudhry Muhammad Furqan, Muhammad Umair Khan, Muhammad Awais, Fulong Jiang, Jinho Bae, Arshad Hassan, Hoi-Sing Kwok
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
R
Q
Acceso en línea:https://doaj.org/article/3a822eb974634b5f871de4a7c3039c32
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:3a822eb974634b5f871de4a7c3039c32
record_format dspace
spelling oai:doaj.org-article:3a822eb974634b5f871de4a7c3039c322021-12-02T15:00:55ZHumidity sensor based on Gallium Nitride for real time monitoring applications10.1038/s41598-021-89956-02045-2322https://doaj.org/article/3a822eb974634b5f871de4a7c3039c322021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89956-0https://doaj.org/toc/2045-2322Abstract Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to anions, making it usable as humidity sensor due to water self-ionization phenomenon. In this work, thin-film GaN based humidity sensor is fabricated through pulse modulated DC magnetron sputtering. Interdigitated electrodes (IDEs) with 100 μm width and spacing were inkjet printed on top of GaN sensing layer to further enhance sensor sensitivity. Impedance, capacitance, and current response were recorded for humidity and bio-sensing applications. The sensor shows approximate linear impedance response between 0 and 100% humidity range, the sensitivity of 8.53 nF/RH% and 79 kΩ/RH% for capacitance and impedance, and fast response (Tres) and recovery (Trec) time of 3.5 s and 9 s, respectively. The sensor shows little hysteresis of < 3.53% with stable and wide variations for accurate measurements. Especially, it demonstrates temperature invariance for thermal stability. Experimental results demonstrate fabricated sensor effectively evaluates plant transpiration cycle through water level monitoring by direct attachment onto leaves without causing any damage as well as freshness level of meat loaf. These properties of the proposed sensor make it a suitable candidate for future electronics providing a low-cost platform for real time monitoring applications.Chaudhry Muhammad FurqanMuhammad Umair KhanMuhammad AwaisFulong JiangJinho BaeArshad HassanHoi-Sing KwokNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Chaudhry Muhammad Furqan
Muhammad Umair Khan
Muhammad Awais
Fulong Jiang
Jinho Bae
Arshad Hassan
Hoi-Sing Kwok
Humidity sensor based on Gallium Nitride for real time monitoring applications
description Abstract Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to anions, making it usable as humidity sensor due to water self-ionization phenomenon. In this work, thin-film GaN based humidity sensor is fabricated through pulse modulated DC magnetron sputtering. Interdigitated electrodes (IDEs) with 100 μm width and spacing were inkjet printed on top of GaN sensing layer to further enhance sensor sensitivity. Impedance, capacitance, and current response were recorded for humidity and bio-sensing applications. The sensor shows approximate linear impedance response between 0 and 100% humidity range, the sensitivity of 8.53 nF/RH% and 79 kΩ/RH% for capacitance and impedance, and fast response (Tres) and recovery (Trec) time of 3.5 s and 9 s, respectively. The sensor shows little hysteresis of < 3.53% with stable and wide variations for accurate measurements. Especially, it demonstrates temperature invariance for thermal stability. Experimental results demonstrate fabricated sensor effectively evaluates plant transpiration cycle through water level monitoring by direct attachment onto leaves without causing any damage as well as freshness level of meat loaf. These properties of the proposed sensor make it a suitable candidate for future electronics providing a low-cost platform for real time monitoring applications.
format article
author Chaudhry Muhammad Furqan
Muhammad Umair Khan
Muhammad Awais
Fulong Jiang
Jinho Bae
Arshad Hassan
Hoi-Sing Kwok
author_facet Chaudhry Muhammad Furqan
Muhammad Umair Khan
Muhammad Awais
Fulong Jiang
Jinho Bae
Arshad Hassan
Hoi-Sing Kwok
author_sort Chaudhry Muhammad Furqan
title Humidity sensor based on Gallium Nitride for real time monitoring applications
title_short Humidity sensor based on Gallium Nitride for real time monitoring applications
title_full Humidity sensor based on Gallium Nitride for real time monitoring applications
title_fullStr Humidity sensor based on Gallium Nitride for real time monitoring applications
title_full_unstemmed Humidity sensor based on Gallium Nitride for real time monitoring applications
title_sort humidity sensor based on gallium nitride for real time monitoring applications
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/3a822eb974634b5f871de4a7c3039c32
work_keys_str_mv AT chaudhrymuhammadfurqan humiditysensorbasedongalliumnitrideforrealtimemonitoringapplications
AT muhammadumairkhan humiditysensorbasedongalliumnitrideforrealtimemonitoringapplications
AT muhammadawais humiditysensorbasedongalliumnitrideforrealtimemonitoringapplications
AT fulongjiang humiditysensorbasedongalliumnitrideforrealtimemonitoringapplications
AT jinhobae humiditysensorbasedongalliumnitrideforrealtimemonitoringapplications
AT arshadhassan humiditysensorbasedongalliumnitrideforrealtimemonitoringapplications
AT hoisingkwok humiditysensorbasedongalliumnitrideforrealtimemonitoringapplications
_version_ 1718389132662669312