A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Abstract We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as...

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Autores principales: Hyunjin Jo, Jeong-Hun Choi, Cheol-Min Hyun, Seung-Young Seo, Da Young Kim, Chang-Min Kim, Myoung-Jae Lee, Jung-Dae Kwon, Hyoung-Seok Moon, Se-Hun Kwon, Ji-Hoon Ahn
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/3afccdaee9cc40728934e63cfb593347
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https://doaj.org/article/3afccdaee9cc40728934e63cfb593347

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