A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Abstract We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as...

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Autores principales:	Hyunjin Jo, Jeong-Hun Choi, Cheol-Min Hyun, Seung-Young Seo, Da Young Kim, Chang-Min Kim, Myoung-Jae Lee, Jung-Dae Kwon, Hyoung-Seok Moon, Se-Hun Kwon, Ji-Hoon Ahn
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/3afccdaee9cc40728934e63cfb593347
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spelling	oai:doaj.org-article:3afccdaee9cc40728934e63cfb5933472021-12-02T15:06:21ZA Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels10.1038/s41598-017-14649-62045-2322https://doaj.org/article/3afccdaee9cc40728934e63cfb5933472017-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-14649-6https://doaj.org/toc/2045-2322Abstract We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al2O3 passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS2 transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials.Hyunjin JoJeong-Hun ChoiCheol-Min HyunSeung-Young SeoDa Young KimChang-Min KimMyoung-Jae LeeJung-Dae KwonHyoung-Seok MoonSe-Hun KwonJi-Hoon AhnNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hyunjin Jo Jeong-Hun Choi Cheol-Min Hyun Seung-Young Seo Da Young Kim Chang-Min Kim Myoung-Jae Lee Jung-Dae Kwon Hyoung-Seok Moon Se-Hun Kwon Ji-Hoon Ahn A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
description	Abstract We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al2O3 passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS2 transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials.
format	article
author	Hyunjin Jo Jeong-Hun Choi Cheol-Min Hyun Seung-Young Seo Da Young Kim Chang-Min Kim Myoung-Jae Lee Jung-Dae Kwon Hyoung-Seok Moon Se-Hun Kwon Ji-Hoon Ahn
author_facet	Hyunjin Jo Jeong-Hun Choi Cheol-Min Hyun Seung-Young Seo Da Young Kim Chang-Min Kim Myoung-Jae Lee Jung-Dae Kwon Hyoung-Seok Moon Se-Hun Kwon Ji-Hoon Ahn
author_sort	Hyunjin Jo
title	A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_short	A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_full	A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_fullStr	A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_full_unstemmed	A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_sort	hybrid gate dielectrics of ion gel with ultra-thin passivation layer for high-performance transistors based on two-dimensional semiconductor channels
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/3afccdaee9cc40728934e63cfb593347
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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

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