Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly described by current models. This work investigates...
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| Auteurs principaux: | , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/3d8e007afccb4db1b9766f1ea6e1fdf8 |
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