Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly described by current models. This work investigates...

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Autores principales: Luca Nela, Catherine Erine, Maria Vittoria Oropallo, Elison Matioli
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Lenguaje:EN
Publicado: IEEE 2021
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Acceso en línea:https://doaj.org/article/3d8e007afccb4db1b9766f1ea6e1fdf8
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spelling oai:doaj.org-article:3d8e007afccb4db1b9766f1ea6e1fdf82021-11-18T00:00:40ZFigures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs2168-673410.1109/JEDS.2021.3125742https://doaj.org/article/3d8e007afccb4db1b9766f1ea6e1fdf82021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9606214/https://doaj.org/toc/2168-6734In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly described by current models. This work investigates the specific characteristics of the depletion in lateral devices, particularly focusing on the substantial potential of Polarization Super Junctions (PSJs) compared to conventional High-Electron-Mobility Transistors (HEMTs). Our results show that PSJs can result in more than a 10-fold decrease in specific on-resistance for the same breakdown voltage compared to HEMTs, which can be further improved by the use of multi-channel heterostructures. In addition, we demonstrate that PSJs lead to a significant reduction of the <inline-formula> <tex-math notation="LaTeX">$R_{ON}\times E_{\mathrm{ oss}}$ </tex-math></inline-formula> figure-of-merit, both in the case of negligible and dominating parasitic contributions. This model enables a proper evaluation of the main figures-of-merit of lateral GaN power devices and shows the potential of PSJs to reduce both the DC and switching losses in power devices.Luca NelaCatherine ErineMaria Vittoria OropalloElison MatioliIEEEarticleGallium Nitridepolarization super junctionHEMToff-state modelingElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1066-1075 (2021)
institution DOAJ
collection DOAJ
language EN
topic Gallium Nitride
polarization super junction
HEMT
off-state modeling
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
spellingShingle Gallium Nitride
polarization super junction
HEMT
off-state modeling
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Luca Nela
Catherine Erine
Maria Vittoria Oropallo
Elison Matioli
Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
description In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly described by current models. This work investigates the specific characteristics of the depletion in lateral devices, particularly focusing on the substantial potential of Polarization Super Junctions (PSJs) compared to conventional High-Electron-Mobility Transistors (HEMTs). Our results show that PSJs can result in more than a 10-fold decrease in specific on-resistance for the same breakdown voltage compared to HEMTs, which can be further improved by the use of multi-channel heterostructures. In addition, we demonstrate that PSJs lead to a significant reduction of the <inline-formula> <tex-math notation="LaTeX">$R_{ON}\times E_{\mathrm{ oss}}$ </tex-math></inline-formula> figure-of-merit, both in the case of negligible and dominating parasitic contributions. This model enables a proper evaluation of the main figures-of-merit of lateral GaN power devices and shows the potential of PSJs to reduce both the DC and switching losses in power devices.
format article
author Luca Nela
Catherine Erine
Maria Vittoria Oropallo
Elison Matioli
author_facet Luca Nela
Catherine Erine
Maria Vittoria Oropallo
Elison Matioli
author_sort Luca Nela
title Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
title_short Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
title_full Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
title_fullStr Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
title_full_unstemmed Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
title_sort figures-of-merit of lateral gan power devices: modeling and comparison of hemts and psjs
publisher IEEE
publishDate 2021
url https://doaj.org/article/3d8e007afccb4db1b9766f1ea6e1fdf8
work_keys_str_mv AT lucanela figuresofmeritoflateralganpowerdevicesmodelingandcomparisonofhemtsandpsjs
AT catherineerine figuresofmeritoflateralganpowerdevicesmodelingandcomparisonofhemtsandpsjs
AT mariavittoriaoropallo figuresofmeritoflateralganpowerdevicesmodelingandcomparisonofhemtsandpsjs
AT elisonmatioli figuresofmeritoflateralganpowerdevicesmodelingandcomparisonofhemtsandpsjs
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