A scheme for enabling the ultimate speed of threshold switching in phase change memory devices

Abstract Phase change materials exhibit threshold switching (TS) that establishes electrical conduction through amorphous material followed by Joule heating leading to its crystallization (set). However, achieving picosecond TS is one of the key challenges for realizing non-volatile memory operation...

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Autores principales: Nishant Saxena, Rajamani Raghunathan, Anbarasu Manivannan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/3dab52f9e24a4cdc97d94dcab9eacbd2
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