A scheme for enabling the ultimate speed of threshold switching in phase change memory devices

Abstract Phase change materials exhibit threshold switching (TS) that establishes electrical conduction through amorphous material followed by Joule heating leading to its crystallization (set). However, achieving picosecond TS is one of the key challenges for realizing non-volatile memory operation...

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Autores principales:	Nishant Saxena, Rajamani Raghunathan, Anbarasu Manivannan
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/3dab52f9e24a4cdc97d94dcab9eacbd2
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spelling	oai:doaj.org-article:3dab52f9e24a4cdc97d94dcab9eacbd22021-12-02T17:05:11ZA scheme for enabling the ultimate speed of threshold switching in phase change memory devices10.1038/s41598-021-85690-92045-2322https://doaj.org/article/3dab52f9e24a4cdc97d94dcab9eacbd22021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85690-9https://doaj.org/toc/2045-2322Abstract Phase change materials exhibit threshold switching (TS) that establishes electrical conduction through amorphous material followed by Joule heating leading to its crystallization (set). However, achieving picosecond TS is one of the key challenges for realizing non-volatile memory operations closer to the speed of computing. Here, we present a trajectory map for enabling picosecond TS on the basis of exhaustive experimental results of voltage-dependent transient characteristics of Ge2Sb2Te5 phase-change memory (PCM) devices. We demonstrate strikingly faster switching, revealing an extraordinarily low delay time of less than 50 ps for an over-voltage equal to twice the threshold voltage. Moreover, a constant device current during the delay time validates the electronic nature of TS. This trajectory map will be useful for designing PCM device with SRAM-like speed.Nishant SaxenaRajamani RaghunathanAnbarasu ManivannanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Nishant Saxena Rajamani Raghunathan Anbarasu Manivannan A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
description	Abstract Phase change materials exhibit threshold switching (TS) that establishes electrical conduction through amorphous material followed by Joule heating leading to its crystallization (set). However, achieving picosecond TS is one of the key challenges for realizing non-volatile memory operations closer to the speed of computing. Here, we present a trajectory map for enabling picosecond TS on the basis of exhaustive experimental results of voltage-dependent transient characteristics of Ge2Sb2Te5 phase-change memory (PCM) devices. We demonstrate strikingly faster switching, revealing an extraordinarily low delay time of less than 50 ps for an over-voltage equal to twice the threshold voltage. Moreover, a constant device current during the delay time validates the electronic nature of TS. This trajectory map will be useful for designing PCM device with SRAM-like speed.
format	article
author	Nishant Saxena Rajamani Raghunathan Anbarasu Manivannan
author_facet	Nishant Saxena Rajamani Raghunathan Anbarasu Manivannan
author_sort	Nishant Saxena
title	A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
title_short	A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
title_full	A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
title_fullStr	A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
title_full_unstemmed	A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
title_sort	scheme for enabling the ultimate speed of threshold switching in phase change memory devices
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/3dab52f9e24a4cdc97d94dcab9eacbd2
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A scheme for enabling the ultimate speed of threshold switching in phase change memory devices

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