Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.

Guardado en:
Detalles Bibliográficos
Autores principales: K. Olejník, V. Schuler, X. Marti, V. Novák, Z. Kašpar, P. Wadley, R. P. Campion, K. W. Edmonds, B. L. Gallagher, J. Garces, M. Baumgartner, P. Gambardella, T. Jungwirth
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Q
Acceso en línea:https://doaj.org/article/3fd98e0a0f1e483898fedf8277e81ea2
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!