Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility
Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.
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Nature Portfolio
2017
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oai:doaj.org-article:3fd98e0a0f1e483898fedf8277e81ea22021-12-02T14:42:05ZAntiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility10.1038/ncomms154342041-1723https://doaj.org/article/3fd98e0a0f1e483898fedf8277e81ea22017-05-01T00:00:00Zhttps://doi.org/10.1038/ncomms15434https://doaj.org/toc/2041-1723Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.K. OlejníkV. SchulerX. MartiV. NovákZ. KašparP. WadleyR. P. CampionK. W. EdmondsB. L. GallagherJ. GarcesM. BaumgartnerP. GambardellaT. JungwirthNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017) |
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EN |
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Science Q |
spellingShingle |
Science Q K. Olejník V. Schuler X. Marti V. Novák Z. Kašpar P. Wadley R. P. Campion K. W. Edmonds B. L. Gallagher J. Garces M. Baumgartner P. Gambardella T. Jungwirth Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
description |
Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces. |
format |
article |
author |
K. Olejník V. Schuler X. Marti V. Novák Z. Kašpar P. Wadley R. P. Campion K. W. Edmonds B. L. Gallagher J. Garces M. Baumgartner P. Gambardella T. Jungwirth |
author_facet |
K. Olejník V. Schuler X. Marti V. Novák Z. Kašpar P. Wadley R. P. Campion K. W. Edmonds B. L. Gallagher J. Garces M. Baumgartner P. Gambardella T. Jungwirth |
author_sort |
K. Olejník |
title |
Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
title_short |
Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
title_full |
Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
title_fullStr |
Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
title_full_unstemmed |
Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
title_sort |
antiferromagnetic cumnas multi-level memory cell with microelectronic compatibility |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/3fd98e0a0f1e483898fedf8277e81ea2 |
work_keys_str_mv |
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_version_ |
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