Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Oxygen vacancies near the interface in oxide heterostructures can lead to large changes in properties, including metal–insulator transition temperatures or catalytic activity. Here, the authors demonstrate a way to reversibly control the oxygen-vacancy concentration and distribution in oxide heteros...

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Bibliographic Details
Main Authors: Boyd W. Veal, Seong Keun Kim, Peter Zapol, Hakim Iddir, Peter M. Baldo, Jeffrey A. Eastman
Format: article
Language:EN
Published: Nature Portfolio 2016
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Online Access:https://doaj.org/article/40092c7cdfcc4f38a704d292b95f35ef
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