High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration

In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were...

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Autores principales: Shufeng Weng, Rongsheng Chen, Wei Zhong, Sunbin Deng, Guijun Li, Fion Sze Yan Yeung, Linfeng Lan, Zhijian Chen, Hoi-Sing Kwok
Formato: article
Lenguaje:EN
Publicado: IEEE 2019
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Acceso en línea:https://doaj.org/article/400d9b0a92f84515ba85634b3e5980ef
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