High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration
In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were...
Guardado en:
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/400d9b0a92f84515ba85634b3e5980ef |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm<sup>2</sup>/<inline-formula> <tex-math notation="LaTeX">$\text{V}\cdot \text{s}$ </tex-math></inline-formula>, a high <inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on/off}}$ </tex-math></inline-formula> ratio of over <inline-formula> <tex-math notation="LaTeX">$10^{8}$ </tex-math></inline-formula>, a subthreshold swing of 0.17 V/decade, and a turn-on voltage of −0.4 V, even with an Sn concentration of only 11.95%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only −0.4 V. |
|---|