High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration
In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were...
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oai:doaj.org-article:400d9b0a92f84515ba85634b3e5980ef2021-11-19T00:01:21ZHigh-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration2168-673410.1109/JEDS.2019.2919424https://doaj.org/article/400d9b0a92f84515ba85634b3e5980ef2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8723443/https://doaj.org/toc/2168-6734In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm<sup>2</sup>/<inline-formula> <tex-math notation="LaTeX">$\text{V}\cdot \text{s}$ </tex-math></inline-formula>, a high <inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on/off}}$ </tex-math></inline-formula> ratio of over <inline-formula> <tex-math notation="LaTeX">$10^{8}$ </tex-math></inline-formula>, a subthreshold swing of 0.17 V/decade, and a turn-on voltage of −0.4 V, even with an Sn concentration of only 11.95%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only −0.4 V.Shufeng WengRongsheng ChenWei ZhongSunbin DengGuijun LiFion Sze Yan YeungLinfeng LanZhijian ChenHoi-Sing KwokIEEEarticleSputteringthin-film transistor (TFT)zinc tin oxide (ZTO)Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 632-637 (2019) |
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DOAJ |
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DOAJ |
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EN |
| topic |
Sputtering thin-film transistor (TFT) zinc tin oxide (ZTO) Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| spellingShingle |
Sputtering thin-film transistor (TFT) zinc tin oxide (ZTO) Electrical engineering. Electronics. Nuclear engineering TK1-9971 Shufeng Weng Rongsheng Chen Wei Zhong Sunbin Deng Guijun Li Fion Sze Yan Yeung Linfeng Lan Zhijian Chen Hoi-Sing Kwok High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration |
| description |
In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm<sup>2</sup>/<inline-formula> <tex-math notation="LaTeX">$\text{V}\cdot \text{s}$ </tex-math></inline-formula>, a high <inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on/off}}$ </tex-math></inline-formula> ratio of over <inline-formula> <tex-math notation="LaTeX">$10^{8}$ </tex-math></inline-formula>, a subthreshold swing of 0.17 V/decade, and a turn-on voltage of −0.4 V, even with an Sn concentration of only 11.95%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only −0.4 V. |
| format |
article |
| author |
Shufeng Weng Rongsheng Chen Wei Zhong Sunbin Deng Guijun Li Fion Sze Yan Yeung Linfeng Lan Zhijian Chen Hoi-Sing Kwok |
| author_facet |
Shufeng Weng Rongsheng Chen Wei Zhong Sunbin Deng Guijun Li Fion Sze Yan Yeung Linfeng Lan Zhijian Chen Hoi-Sing Kwok |
| author_sort |
Shufeng Weng |
| title |
High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration |
| title_short |
High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration |
| title_full |
High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration |
| title_fullStr |
High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration |
| title_full_unstemmed |
High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration |
| title_sort |
high-performance amorphous zinc–tin–oxide thin-film transistors with low tin concentration |
| publisher |
IEEE |
| publishDate |
2019 |
| url |
https://doaj.org/article/400d9b0a92f84515ba85634b3e5980ef |
| work_keys_str_mv |
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| _version_ |
1718420664359059456 |