High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration
In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were...
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| Main Authors: | , , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2019
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| Subjects: | |
| Online Access: | https://doaj.org/article/400d9b0a92f84515ba85634b3e5980ef |
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