NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 va...
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/403b1b23c9414f8384e305fcb7bd19dc |
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