NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 va...

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Autores principales:	Muhammad Hussain, Syed Hassan Abbas Jaffery, Asif Ali, Cong Dinh Nguyen, Sikandar Aftab, Muhammad Riaz, Sohail Abbas, Sajjad Hussain, Yongho Seo, Jongwan Jung
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/403b1b23c9414f8384e305fcb7bd19dc
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spelling	oai:doaj.org-article:403b1b23c9414f8384e305fcb7bd19dc2021-12-02T13:30:17ZNIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode10.1038/s41598-021-83187-z2045-2322https://doaj.org/article/403b1b23c9414f8384e305fcb7bd19dc2021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-83187-zhttps://doaj.org/toc/2045-2322Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = − 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW−1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W−1, and the noise equivalent power (NEP) of 1.22 × 10–13 WHz−1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.Muhammad HussainSyed Hassan Abbas JafferyAsif AliCong Dinh NguyenSikandar AftabMuhammad RiazSohail AbbasSajjad HussainYongho SeoJongwan JungNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Muhammad Hussain Syed Hassan Abbas Jaffery Asif Ali Cong Dinh Nguyen Sikandar Aftab Muhammad Riaz Sohail Abbas Sajjad Hussain Yongho Seo Jongwan Jung NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
description	Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = − 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW−1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W−1, and the noise equivalent power (NEP) of 1.22 × 10–13 WHz−1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.
format	article
author	Muhammad Hussain Syed Hassan Abbas Jaffery Asif Ali Cong Dinh Nguyen Sikandar Aftab Muhammad Riaz Sohail Abbas Sajjad Hussain Yongho Seo Jongwan Jung
author_facet	Muhammad Hussain Syed Hassan Abbas Jaffery Asif Ali Cong Dinh Nguyen Sikandar Aftab Muhammad Riaz Sohail Abbas Sajjad Hussain Yongho Seo Jongwan Jung
author_sort	Muhammad Hussain
title	NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
title_short	NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
title_full	NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
title_fullStr	NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
title_full_unstemmed	NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
title_sort	nir self-powered photodetection and gate tunable rectification behavior in 2d gese/mose2 heterojunction diode
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/403b1b23c9414f8384e305fcb7bd19dc
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NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

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