NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 va...

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Autores principales: Muhammad Hussain, Syed Hassan Abbas Jaffery, Asif Ali, Cong Dinh Nguyen, Sikandar Aftab, Muhammad Riaz, Sohail Abbas, Sajjad Hussain, Yongho Seo, Jongwan Jung
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/403b1b23c9414f8384e305fcb7bd19dc
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