Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP

Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP

This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La<sub>2</sub>O<sub>3</sub> dipole-doped N-type MOSCAP. Experimental results show that the dipole-dop...

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Autores principales: Fu-Yuan Jin, Ting-Chang Chang, Chien-Yu Lin, Jih-Chien Liao, Fong-Min Ciou, Yu-Shan Lin, Wei-Chun Hung, Kai-Chun Chang, Yun-Hsuan Lin, Yen-Cheng Chang, Ting-Tzu Kuo
Formato: article
Lenguaje:EN
Publicado: IEEE 2019
Materias:
MOSCAP
dipole doping
PBTI
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/4047e49c404149afa37bbd7316f0ca15
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https://doaj.org/article/4047e49c404149afa37bbd7316f0ca15

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