Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP

This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La<sub>2</sub>O<sub>3</sub> dipole-doped N-type MOSCAP. Experimental results show that the dipole-dop...

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Autores principales:	Fu-Yuan Jin, Ting-Chang Chang, Chien-Yu Lin, Jih-Chien Liao, Fong-Min Ciou, Yu-Shan Lin, Wei-Chun Hung, Kai-Chun Chang, Yun-Hsuan Lin, Yen-Cheng Chang, Ting-Tzu Kuo
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	MOSCAP dipole doping PBTI Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/4047e49c404149afa37bbd7316f0ca15
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spelling	oai:doaj.org-article:4047e49c404149afa37bbd7316f0ca152021-11-19T00:01:18ZAbnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP2168-673410.1109/JEDS.2019.2932603https://doaj.org/article/4047e49c404149afa37bbd7316f0ca152019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8784162/https://doaj.org/toc/2168-6734This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La<sub>2</sub>O<sub>3</sub> dipole-doped N-type MOSCAP. Experimental results show that the dipole-doped N-type MOSCAP has a lower threshold voltage and gate current leakage than do the N-type MOSCAP. After positive bias stress, an abnormal gate current leakage decrease appears in both dipole-doped and normal N-type MOSCAPs under short term stress. Analysis of capacitance and gate current measurements indicate that electron trapping and defect generation cause the change in gate current after positive bias stress. Generally, devices with higher gate leakage have more severe degradation after PBTI. However, in this work, the dipole sample shows a lower initial gate current leakage but higher gate current degradation than those found in the control sample after PBTI. Based on the electrical measurement results and the energy band simulation, a conduction model was proposed to explain the abnormal PBTI of the dipole-doped N-type MOSCAP.Fu-Yuan JinTing-Chang ChangChien-Yu LinJih-Chien LiaoFong-Min CiouYu-Shan LinWei-Chun HungKai-Chun ChangYun-Hsuan LinYen-Cheng ChangTing-Tzu KuoIEEEarticleMOSCAPdipole dopingPBTIElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 897-901 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	MOSCAP dipole doping PBTI Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	MOSCAP dipole doping PBTI Electrical engineering. Electronics. Nuclear engineering TK1-9971 Fu-Yuan Jin Ting-Chang Chang Chien-Yu Lin Jih-Chien Liao Fong-Min Ciou Yu-Shan Lin Wei-Chun Hung Kai-Chun Chang Yun-Hsuan Lin Yen-Cheng Chang Ting-Tzu Kuo Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
description	This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La<sub>2</sub>O<sub>3</sub> dipole-doped N-type MOSCAP. Experimental results show that the dipole-doped N-type MOSCAP has a lower threshold voltage and gate current leakage than do the N-type MOSCAP. After positive bias stress, an abnormal gate current leakage decrease appears in both dipole-doped and normal N-type MOSCAPs under short term stress. Analysis of capacitance and gate current measurements indicate that electron trapping and defect generation cause the change in gate current after positive bias stress. Generally, devices with higher gate leakage have more severe degradation after PBTI. However, in this work, the dipole sample shows a lower initial gate current leakage but higher gate current degradation than those found in the control sample after PBTI. Based on the electrical measurement results and the energy band simulation, a conduction model was proposed to explain the abnormal PBTI of the dipole-doped N-type MOSCAP.
format	article
author	Fu-Yuan Jin Ting-Chang Chang Chien-Yu Lin Jih-Chien Liao Fong-Min Ciou Yu-Shan Lin Wei-Chun Hung Kai-Chun Chang Yun-Hsuan Lin Yen-Cheng Chang Ting-Tzu Kuo
author_facet	Fu-Yuan Jin Ting-Chang Chang Chien-Yu Lin Jih-Chien Liao Fong-Min Ciou Yu-Shan Lin Wei-Chun Hung Kai-Chun Chang Yun-Hsuan Lin Yen-Cheng Chang Ting-Tzu Kuo
author_sort	Fu-Yuan Jin
title	Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
title_short	Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
title_full	Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
title_fullStr	Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
title_full_unstemmed	Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
title_sort	abnormal positive bias temperature instability induced by dipole doped n-type moscap
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/4047e49c404149afa37bbd7316f0ca15
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_version_	1718420664707186688

Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP

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