Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La<sub>2</sub>O<sub>3</sub> dipole-doped N-type MOSCAP. Experimental results show that the dipole-dop...
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| Autores principales: | , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/4047e49c404149afa37bbd7316f0ca15 |
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