Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
Heusler alloy thin films with a distorted tetragonal structure have potential spintronics applications given their bulk perpendicular magnetic anisotropy. Here, the authors demonstrate large perpendicular magnetic anisotropy in Mn3Ge thin films accompanied by negative tunnelling magnetoresistance.
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/413f44504f54406d962bfd3bb2e6ebcb |
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