Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

Heusler alloy thin films with a distorted tetragonal structure have potential spintronics applications given their bulk perpendicular magnetic anisotropy. Here, the authors demonstrate large perpendicular magnetic anisotropy in Mn3Ge thin films accompanied by negative tunnelling magnetoresistance.

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Autores principales: Jaewoo Jeong, Yari Ferrante, Sergey V. Faleev, Mahesh G. Samant, Claudia Felser, Stuart S. P. Parkin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Science
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Acceso en línea:https://doaj.org/article/413f44504f54406d962bfd3bb2e6ebcb
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