Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

Heusler alloy thin films with a distorted tetragonal structure have potential spintronics applications given their bulk perpendicular magnetic anisotropy. Here, the authors demonstrate large perpendicular magnetic anisotropy in Mn3Ge thin films accompanied by negative tunnelling magnetoresistance.

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Auteurs principaux: Jaewoo Jeong, Yari Ferrante, Sergey V. Faleev, Mahesh G. Samant, Claudia Felser, Stuart S. P. Parkin
Format: article
Langue:EN
Publié: Nature Portfolio 2016
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Accès en ligne:https://doaj.org/article/413f44504f54406d962bfd3bb2e6ebcb
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